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 PD - 94269
IPS511E
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features
* * * * * * *
Over temperature protection (with auto-restart) Short-circuit protection (current limit ) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground
Product Summary Rds(on) V clamp I Limit V open load 150m (max) 50V 5A 3V
Description
The IPS511E is fully protected five terminal high side switch with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground.
Truth Table
Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out H H L L H H L H H L (limiting) L L H L (cycling) L L Dg H L H H L L L L
Typical Connection
+ VCC + 5v
15K Status feedback Rdg Rin Output pull-up resistor
Packages
Vcc Dg Logic control Out In Gnd
Logic signal
Load
Logic Gnd Load Gnd
LCC 18
1
6/18/01
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IPS511E
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).
Symbol Parameter
Vout Voffset Vin Vcc max Iin, max. Vdg Idg, max Isd cont.
Min.
Max.
Vcc+0.3 Vcc+0.3 5.5 50 10 5.5 10 2.2 10 4 0.5 20 +150 300
Units
Test Conditions
Maximum output voltage Vcc-50 Maximum logic ground to load ground offset Vcc-50 Maximum Input voltage Maximum Vcc voltage Maximum IN current Maximum diagnostic output voltage Maximum diagnostic output current Diode max. permanent current (1) -0.3 -- -5 -0.3 -1 -- -- -- -- -- -40 --
V
mA V mA A C=100pF, R=1500, kV W
o
Isd pulsed Diode max. pulsed current (1) ESD1 Electrostatic discharge voltage (Human Body) ESD2 Pd T j max. T lead Electrostatic discharge voltage (Machine Model) Maximum power dissipation(1) Max. storage & operating junction temp. Lead temperature (soldering 10 seconds)
C=200pF, R=0, L=10H
C
Thermal Characteristics
Symbol Parameter
Rth 1 Rth 2 Thermal resistance junction to case Thermal resistance junction to ambient
Min.
-- --
Typ.
6.25 90
Max. Units Test Conditions
-- --
o
C/W
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS511E
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vcc VIH VIL I out Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current (TAmbient = 85oC, Tj = 125oC, Rth < 60oC/W) (TAmbient = 85oC, Tj = 125oC, Rth = 80oC/W) Recommended resistor in series with IN pin Recommended resistor in series with DG pin
Min.
5.5 4 -0.3 -- -- 4 10
Max.
35 5.5 0.9 1.7 1.5 6 20
Units
V
A k
Rin Rdg
Static Electrical Characteristics
(Tj = 25oC, Vcc = 14V unless otherwise specified.)
Symbol Parameter
R ds(on) R ds(on) R ds(on) Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac V dgl I oh I ol Idg
leakage
Min.
-- -- -- 5.5 50 -- -- -- -- -- -- -- 0 -- -- 1 -- 0.1
Typ.
125 125 215 -- 56 58 0.9 16 0.7 20 0.15 60 -- -- 2.3 1.95 70 0.25
Max. Units Test Conditions
150 150 -- 35 -- 65 1.2 50 2 -- 0.4 110 25 10 3 -- 200 0.5 m Vin = 5V, Iout = 2.5A Tj = 25oC Vin = 5V, Iout = 1A Vcc = 6V Vin = 5V, Iout = 2.5A Tj = 150oC Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V V A V Vin = 5V
ON state resistance ON state resistance ON state resistance Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis
V A mA A V A
V ih V il Iin, on In hyst.
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3
IPS511E
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5.6, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Tdon Turn-on delay time Tr1 Rise time to Vout = Vcc - 5V Tr2 Rise time Vcc - 5V to Vout = 90% of Vcc dV/dt (on) Turn ON dV/dt Eon Turn ON energy T doff Turn-off delay time Tf Fall time to Vout = 10% of Vcc dV/dt (off) Turn OFF dV/dt Eoff Turn OFF energy Tdiag Vout to Vdiag propagation delay
Min.
-- -- -- -- -- -- -- -- -- --
Typ. Max. Units Test Conditions
7 10 45 1.3 400 15 10 2 80 5 50 50 100 4 -- 50 50 6 -- 15 s See figure 3 V/s J s V/s J s See figure 4
See figure 6
Protection Characteristics
Symbol Parameter
I lim Internal current limit T sd+ Over-temp. positive going threshold T sdOver-temp. negative going threshold V sc Short-circuit detection voltage (3) Vopen load Open load detection threshold (3) Referenced to Vcc
Min.
3 -- -- 2 2
Typ.
5 165 158 3 3
Max. Units Test Conditions
7 -- -- 4 4 A C o C V V
o
Vout = 0V See fig. 2 See fig. 2 See fig. 2
Pad Assignments
NC NC NC NC NC
VCC NC VCC VCC
GND NC IN DG
NC SOURCE
NC
NC SOURCE
4
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IPS511E
Functional Block Diagram
All values are typical
VCC
50V
Over temperature
165C 158C
Tj
62 V
Charge pump
2.7 V
IN
7V
200 K
Level
2.2 V
shift
driver
-
DG
7V 20 + Open load 3V
Current limit
+
5A
+
Short-circuit
-
3V
GND
VOUT
T clamp
Vin
Vin
5V 0V
Iout
Ilim.
limiting
T shutdown
cycling
Iout
( + Vcc )
Out
0V V clamp
T
Tsd+ Tsd- ) (160
( see Appl . Notes to evaluate power dissipation )
Figure 1 - Active clamp waveforms
Figure 2 - Protection timing diagram
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5
IPS511E
Vin
Vcc 90% Vcc - 5V
Vin
dV/dt on
Vout
10% Td on
90%
Tr 1
dV/dt off
Tr 2 E1(t)
Vout
10%
Iout2 E2 (t) Inductive load
Iout1 Eon1 Resistive load
Td off Tf
Eon2
Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load
Figure 4 - Switching times definition (turn-off)
V in
Dg Vcc IN Out Gnd
+
V cc V c c -V sc
Vin
Vout
L
14 V -
V o ut
Vol
R
V d iag
Iout
D ia g o n b la nk in g D ia g o ff b la n k in g T d ia g
5v 0v Rem : V load is negative during demagnetization
Figure 5 - Active clamp test circuit
Figure 6 - Diagnostic delay definitions
6
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IPS511E
150
200%
100
150%
50
100%
0 0 5 10 15 20 25 30 35
50%
-5 0 0 50 100 150
Figure 7 - Rds(on) (m) Vs Vcc (V)
Figure 8 - Normalized Rds(on) (%) Vs Tj (oC)
150
10
100 1
50
0.1 0
0
1
2
3
4
5
Figure 9 - Rds(on) (m) Vs Iout (A)
Figure 10 - Max. Iout (A) Vs Load Inductance (uH)
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7
IPS511E
5
Rthja= 20C/W Rthja= 10C/W
5
4
Rthja= 40C/W
4
1inch footprint Rthja= 35C/W
3
Free air
3
2
2
Std. footprint Rthja= 60C/W
1
1
0 25 50 75 100 125 150
0 25 50 75 100 125 150
Figure 11a - Max load current (A) Vs Tamb (oC)
Figure 11b - Max load current (A) Vs Tamb (oC)
100
6 5
10
4
1
3 2
0 .1
1
0 .0 1
0 -50
0
50
100
150
Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (S)
Figure 13 - Ilim (A) Vs Tj (oC)
8
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IPS511E
600
Resistive load
10000
1000
Eon 400 Eoff
100
I=Imax vs Induct.(see fig.10)
I=1.5A
10
200
1
0 0 1 2 3
1E+01
1E+02
1E+03
1E+04
1E+05
Figure 14 - Eon, Eoff (J) (A) Vs Iout (A)
Figure 15 - Eon (J) Vs Load Inductance (H) (see Fig. 3)
150 125 Diag on blanking 100 75 50 25 Diag off blanking 0 0 1 2 3
1.00E-03
1.00E-04
1.00E-05
1.00E-06 0 5 10 15 20 25 30 35
Figure 16 - Diag Blanking time (S) Vs Iout (A) (resistive load - see Fig. 6)
Figure 17 - Icc (mA) Vs Vcc (V)
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1E+06
0.1
9
IPS511E
150 125 100 75 50 25 0 -50 -25
0
25
50
75 100 125 150
Figure 18 - Iin @ Vin = 5V (A) Vs Tj (oC)
Case Outline
LCC-18
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/01 10 www.irf.com


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